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TM2314FN - N-Channel High Density Trench MOSFET

Features

  • Super high dense cell trench design for low RDS(on).
  • Rugged and reliable.
  • Surface Mount package. D SOT-23-3L D S G S G.

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Datasheet preview – TM2314FN

Datasheet Details

Part number TM2314FN
Manufacturer TECH MOS
File Size 220.62 KB
Description N-Channel High Density Trench MOSFET
Datasheet download datasheet TM2314FN Datasheet
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    TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150 Unit V V A A A W °C TA=25°C TA=75°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient Note a.
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