Datasheet4U Logo Datasheet4U.com

BFQ65 - Silicon NPN Planar RF Transistor

Features

  • D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu.

📥 Download Datasheet

Datasheet Details

Part number BFQ65
Manufacturer TEMIC
File Size 62.37 KB
Description Silicon NPN Planar RF Transistor
Datasheet download datasheet BFQ65 Datasheet

📁 Similar Datasheet

  • BFQ65 - BFQ65 (ETC)
  • BFQ60 - LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz (Siemens Semiconductor Group)
  • BFQ621 - NPN 7 GHz wideband transistor (NXP)
  • BFQ67 - NPN 8 GHz wideband transistor (NXP)
  • BFQ67 - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFQ67 - Silicon NPN wideband transistor (TY Semiconductor)
  • BFQ67R - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFQ67T - NPN 8 GHz wideband transistor (NXP)
  • BFQ67W - NPN 8 GHz wideband transistor (NXP)
  • BFQ67W - Silicon NPN Planar RF Transistor (Vishay Telefunken)
Other Datasheets by TEMIC

    Full PDF Text Transcription

    Click to expand full text
    BFQ65 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev.
    Published: |