Description
The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
Features
- According to VDE 0884
D Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
D Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D Creeping current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275
D Thickness through insulation ≥ 0.75 mm
D Further approvals:
BS 415, BS 7002, SETI: IEC 950, UL 1577: Fil.
CNY75A Datasheet
