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CNY75B - Optocoupler

Download the CNY75B datasheet PDF. This datasheet also covers the CNY75 variant, as both devices belong to the same optocoupler family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (CNY75-TEMIC.pdf) that lists specifications for multiple related part numbers.

General Description

The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

95 10531 95 10532 Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For application class I - IV at mains voltage ≤ 300 V D For application class I - III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor-system interface, line receiver.

Overview

CNY75(G) Series Optocoupler with Phototransistor Output Order Nos.

and Classification table is on sheet 2.

Key Features

  • According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: Fil.

📁 Similar Datasheet

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