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CNY75C - Optocoupler

This page provides the datasheet information for the CNY75C, a member of the CNY75 Optocoupler family.

Description

The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

Features

  • According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: Fil.

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Datasheet preview – CNY75C

Datasheet Details

Part number CNY75C
Manufacturer TEMIC
File Size 136.37 KB
Description Optocoupler
Datasheet download datasheet CNY75C Datasheet
Additional preview pages of the CNY75C datasheet.

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Full PDF Text Transcription

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CNY75(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
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