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TEMIC

LL4448 Datasheet Preview

LL4448 Datasheet

Silicon Epitaxial Planar Diodes

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Silicon Epitaxial Planar Diodes
LL4148.LL4448
Features
D Electrical data identical with the devices
1N4148 and 1N4448 respectively
Applications
Extreme fast switches
94 9371
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
tp=1ms
VR=0
Type
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
VRRM
VR
IFSM
IFRM
IF
IFAV
PV
Tj
Tstg
Value
100
75
2
500
300
150
500
175
–65...+175
Unit
V
V
A
mA
mA
mA
mW
°C
°C
Symbol
RthJA
Value
500
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
1 (4)




TEMIC

LL4448 Datasheet Preview

LL4448 Datasheet

Silicon Epitaxial Planar Diodes

No Preview Available !

LL4148.LL4448
Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
Test Conditions
IF=5mA
IF=50mA
IF=100mA
VR=20V
VR=20V, Tj=150°C
VR=75V
IR=100mA, tp/T=0.01,
tp=0.3ms
VR=0, f=1MHz,
VHF=50mV
VHF=2V, f=100MHz
IF=IR=10mA, iR=1mA
WIF=10mA, VR=6V,
iR=0.1xIR, RL=100
Type Symbol Min Typ Max Unit
LL4448
LL4148
LL4448
VF
VF
VF
IR
IR
IR
V(BR)
0.62 0.72
0.86 1
0.93 1
25
50
5
100
V
V
V
nA
mA
mA
V
CD
hr 45
trr
trr
4 pF
%
8 ns
4 ns
Typical Characteristics (Tj = 25_C unless otherwise specified)
1000
100
LL 4148
1000
100
LL 4448
Scattering Limit
10
Scattering Limit
10
1
0.1
0
94 9096
Tj = 25°C
0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
2.0
Figure 1. Forward Current vs. Forward Voltage
1
0.1
0
94 9097
Tj = 25°C
0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
2.0
Figure 2. Forward Current vs. Forward Voltage
2 (4) TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96


Part Number LL4448
Description Silicon Epitaxial Planar Diodes
Maker TEMIC
Total Page 4 Pages
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