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TEMIC
Siliconix
N-Channel Enhancement-Mode 1ransistor
175°C Maximum Junction Temperature
SUP60N06-08
Product Summary
V(BR)nSS (V) 60
rnS(on) (Q) 0.008
In (A) 60
TO-220AB
o
DRAIN connected to TAB
D
G~
GDS ThpView
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Gate·Source Voltage
Parameter
Continuous Drain Current (TJ = 175'C)
Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy' Power Dissipation Operating Junction and Storage Thmperature Range
ITc=25'C ITc= 125'C
I L - 0.1 mH I Tc=25'C
Symbol
VGS
JD
JDM JAR EAR
Po
TJ, T,tg
limit
±20 60' 55 240 60 180 150 -55 to 175
Unit
V
A
mJ W 'C
Thermal Resistance Ratings
Parameter
Junction·te-Ambient, Free Air lunction-to-Case
Notes
a. Dutycycle s 1%.
Symbol
RthJA RthJC
P·36737-Rev.
SUP60N06-08 Datasheet
