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SUP/SUB65P06-20
P-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
–60 TOĆ220AB TOĆ263
G DRAIN connected to TAB G D S Top View SUB65P06Ć20 D PĆChannel MOSFET
rDS(on) (W)
0.020
ID (A)
–65a
S
GD S Top View SUP65P06Ć20
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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Parameter Symbol
VGS TC = 25_C TC = 125_C ID IDM IAR
Limit
"20 –65a –39 –200 –60 180 187d
Unit
V
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c
A
EAR PD TJ, Tstg
mJ W
3.
SUB65P06-20 Datasheet
