* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage an.

General Features
* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density cell desi.

The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V <.

40H192

40H000F

40H20AD

40HF

40HF10

40HF100

40HF100M

40HF100R

40HF10M

40HF10R

40HF120

40HF120M

40HF120R