Datasheet4U Logo Datasheet4U.com

2SC3834 Datasheet Silicon NPN Transistor

Manufacturer: TGS

Datasheet Details

Part number 2SC3834
Manufacturer TGS
File Size 77.53 KB
Description Silicon NPN Transistor
Download 2SC3834 Download (PDF)

General Description

It is intented for use in power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max.

Operating Junction Temperature O Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 200 120 8.0 7.0 3.0 50 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=200V, IE=0 VEB=8V, IC=0 IC=50mA, IB=0 VCE=4V, IC=0.3A VCE=4V, IC=3.0A 120 100 70 220 0.5 1.2 10 V V MHz Min.

Overview

TIGER ELECTRONIC CO.,LTD Silicon NPN Triple Diffused Planar Transistor Product specification.