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HX4N60 - N-Channel MOSFET

Description

solenoid, motor drivers, relay drivers.

Features

  • z RDS(ON) =2.50Ω@VGS = 10 V z Low gate charge ( typical 16nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability.
  • Symbol.
  • Ordering Information Order Number Normal Lead Free Plating HX4N60-TA3-T HX4N60L-TA3-T HX4N60-TF3-T HX4N60L-TF3-T HX4N60-TM3-T HX4N60L-TM3-T HX4N60-TN3-T HX4N60L-TN3-T HX4N60-TN3-R HX4N60L-TN3-R Note:Pin Assignment: G:Gate D:Drain S:Source HX4N60L-TA3-T （1）Packing Type （2）Package Type （3）Lead Platin.

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Datasheet Details

Part number HX4N60
Manufacturer TIANJIN HUANXIN TECHNOLOGY
File Size 494.03 KB
Description N-Channel MOSFET
Datasheet download datasheet HX4N60 Datasheet

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    Full PDF Text Transcription

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    HX4N60 4.4A mps，600Volts N-Channel MOSFET Power MOSFET ■ Description The HX4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features z RDS(ON) =2.
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