TXY8205A Description
Dual N-Channel High Density Trench MOSFET 双 N 沟道高密度场效应晶体管 TYPE 器件型号 BVDSS 漏-源极电压 TXY8205A 20V ID 电流 6A RDS(ON) (Typ.) 导通电阻 (典型值) 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V.
- Part: TXY8205A
- Manufacturer: TMOS
- Size: 720.21 KB
TXY8205A is Dual N-CHANNEL High Density Trench MOSFET manufactured by TMOS.
Dual N-Channel High Density Trench MOSFET 双 N 沟道高密度场效应晶体管 TYPE 器件型号 BVDSS 漏-源极电压 TXY8205A 20V ID 电流 6A RDS(ON) (Typ.) 导通电阻 (典型值) 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V.