TC1601 Datasheet - TRANSCOM

2W High Linearity and High Efficiency GaAs Power FETs

TC1601 Features

* ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 5 mm ! High Power Added

TC1601 General Description

The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the .

TC1601 Datasheet (104.13 KB)

TC1601 Datasheet Preview — Preview of TC1601 PDF

Datasheet Details

Part number:

TC1601

Manufacturer:

TRANSCOM

File Size:

104.13 KB

Description:

2w high linearity and high efficiency gaas power fets.

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TC1601 High Linearity and High Efficiency GaAs Power FETs TRANSCOM

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TC1601 Features

TC1601 General Description

Datasheet Details

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