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TGAN15N120ND - NPT Trench IGBT

Key Features

  • 1200V NPT Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy parallel Operation.
  • RoHS compliant.
  • JEDEC Qualification.

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Datasheet Details

Part number TGAN15N120ND
Manufacturer TRinno
File Size 889.70 KB
Description NPT Trench IGBT
Datasheet download datasheet TGAN15N120ND Datasheet

Full PDF Text Transcription for TGAN15N120ND (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGAN15N120ND. For precise diagrams, and layout, please refer to the original PDF.

Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC...

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erature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN15N120ND NPT Trench IGBT E GC Device TGAN15N120ND Package TO-3PN Marking TGAN15N120ND Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from

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