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TRinno

TGAN15N120ND Datasheet Preview

TGAN15N120ND Datasheet

NPT Trench IGBT

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Features:
1200V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy parallel Operation
RoHS compliant
JEDEC Qualification
Applications :
Induction Heating, Soft switching application
TGAN15N120ND
NPT Trench IGBT
E
GC
Device
TGAN15N120ND
Package
TO-3PN
Marking
TGAN15N120ND
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25
TC = 100
Diode Continuous Forward Current
Diode Maximum Forward Current
TC = 100
Power Dissipation
TC = 25
TC = 100
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
IFM
PD
TJ
TSTG
TL
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Value
1200
±20
30
15
45
15
45
212
85
-55 ~ 150
-55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.59
3
40
Oct. 2013 : Rev.2.1
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
A
W
W
Unit
/W
/W
/W
1/8




TRinno

TGAN15N120ND Datasheet Preview

TGAN15N120ND Datasheet

NPT Trench IGBT

No Preview Available !

TGAN15N120ND
NPT Trench IGBT
Electrical Characteristics of the IGBT TC=25, unless otherwise noted
Parameter
Symbol
Test condition
OFF
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
BVCES
ICES
IGES
VGE = 0V, IC = 1mA
VCE = 1200V, VGE = 0V
VCE = 0V, VGE = ± 20V
ON
Gate Emitter Threshold Voltage
VGE(TH)
Collector Emitter Saturation Voltage VCE(SAT)
VGE = VCE, IC = 15mA
VGE = 15V, IC = 15A, TC = 25 oC
VGE = 15V, IC = 15A, TC = 125 oC
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (Note 2)
CIES
COES
CRES
VCE = 30V,
VGE = 0V
f = 1MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
td(on)
tr
td(off)
tf
EON
EOFF
ETS
td(on)
tr
td(off)
tf
EON
EOFF
ETS
Qg
Qge
Qgc
VCC = 600V, IC = 15A
RG = 10Ω, VGE = 15V
Inductive Load, TC = 25 oC
VCC = 600V, IC = 15A
RG = 10Ω, VGE = 15V
Inductive Load, TC = 125 oC
VCC = 600V, IC = 15A
VGE = 15V
Notes :
(2) Not subject to production test verified by design/characterization
Min. Typ. Max. Unit
1200
--
-- V
-- -- 1 mA
-- -- ± 250 nA
3.0 5.0 7.0 V
-- 1.9 2.5 V
-- 2.2 -- V
-- 2640 --
-- 60 --
-- 40 --
pF
pF
pF
-- 25 -- ns
-- 22 -- ns
-- 166 -- ns
-- 103 155 ns
-- 1.61 2.42 mJ
-- 0.53 0.8 mJ
-- 2.14 3.22 mJ
-- 21 -- ns
-- 22 -- ns
-- 187 -- ns
-- 195 -- ns
-- 1.76 2.64 mJ
-- 1.02 1.53 mJ
-- 2.78 4.17 mJ
-- 140 210 nC
-- 15 22 nC
-- 60 90 nC
Oct. 2013 : Rev.2.1
www.trinnotech.com
2/8


Part Number TGAN15N120ND
Description NPT Trench IGBT
Maker TRinno
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