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TRinno

TGAN25N120FDR Datasheet Preview

TGAN25N120FDR Datasheet

Field Stop Trench IGBT

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Features
1200V Field Stop Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy Parallel Operation
Short Circuit Withstanding Time 5μs
RoHS Compliant
JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN25N120FDR
Field Stop Trench IGBT
E
GC
Device
TGAN25N120FDR
Package
TO-3PN
Marking
TGAN25N120FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25
TC = 100
Diode Continuous Forward Current
Power Dissipation
TC = 100
TC = 25
TC = 100
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
IC
ICM
IF
PD
TJ
TSTG
TL
Value
1200
±20
50
25
75
25
338
135
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.37
2.1
40
October 2015. Rev 0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
Unit
/W
/W
/W
1/8




TRinno

TGAN25N120FDR Datasheet Preview

TGAN25N120FDR Datasheet

Field Stop Trench IGBT

No Preview Available !

TGAN25N120FDR
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25, unless otherwise noted
Parameter
Symbol
Test condition
OFF
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
ON
Gate Emitter Threshold Voltage
Collector Emitter Saturation Voltage
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Short Circuit Withstanding Time
ICES
IGES
VGE(TH)
VCE(SAT)
CIES
COES
CRES
td(on)
tr
td(off)
tf
EON
EOFF
ETS
td(on)
tr
td(off)
tf
EON
EOFF
ETS
Qg
Qge
Qgc
tSC
VCE = 1200V, VGE = 0V
VCE = 0V, VGE = ± 20V
VGE = VCE, IC = 25mA
VGE = 15V, IC = 25A, TC = 25
VGE = 15V, IC = 25A, TC = 150
VCE = 30V,
VGE = 0V
f = 1MHz
VCC = 600V, IC = 25A
RG = 10Ω, VGE = 15V
Inductive Load, TC = 25
VCC = 600V, IC = 25A
RG = 10Ω, VGE = 15V
Inductive Load, TC = 150
VCC = 600V, IC = 25A
VGE = 15V
VCC = 600V, VGE = 15V, TC = 125
Min.
--
--
4.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
5
Typ. Max. Unit
-- 1 mA
-- ± 250 nA
6.5 8.5 V
2.0 2.5 V
2.3 -- V
3770
--
pF
105 -- pF
75 -- pF
40 -- ns
40 -- ns
220 -- ns
25 37 ns
2.91 4.36 mJ
0.92 1.38 mJ
3.83 5.74 mJ
40 -- ns
35 -- ns
240 -- ns
40 -- ns
3.08 4.62 mJ
1.27 1.90 mJ
4.35 6.52 mJ
215 320 nC
30 45 nC
110 165 nC
-- -- μs
Notes :
(2) Not subject to production test verified by design/characterization
October 2015. Rev 0.0
www.trinnotech.com
2/8


Part Number TGAN25N120FDR
Description Field Stop Trench IGBT
Maker TRinno
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