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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification
Applications : Induction Heating, Soft switching application
TGAN25N120ND
NPT Trench IGBT
E GC
Device TGAN25N120ND
Package TO-3PN
Marking TGAN25N120ND
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Diode Maximum Forward Current
TC = 100 ℃
Power Dissipation
TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF IFM
P
TGAN25N120ND Datasheet
