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TRinno

TGAN30N135FD1 Datasheet Preview

TGAN30N135FD1 Datasheet

Field Stop Trench IGBT

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Features:
1350V Field Stop Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy Parallel Operation
RoHS Compliant
JEDEC Qualification
Applications :
Induction Heating, Soft switching application
TGAN30N135FD1
Field Stop Trench IGBT
E
GC
Device
TGAN30N135FD1
Package
TO-3PN
Marking
TGAN30N135FD1
Absolute Maximum Ratings
Parameter
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Power Dissipation
Operating Junction Temperature
TC = 25
TC = 100
TC = 100
TC = 25
TC = 100
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Value
1350
±20
60
30
90
30
329
132
-55 ~ 150
-55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.38
2.1
40
Feb. 2014 : rev 0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
Unit
/W
/W
/W
1/8




TRinno

TGAN30N135FD1 Datasheet Preview

TGAN30N135FD1 Datasheet

Field Stop Trench IGBT

No Preview Available !

TGAN30N135FD1
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25, unless otherwise noted
Parameter
Symbol
Test condition
OFF
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
BVCES
ICES
IGES
ON
Gate Emitter Threshold Voltage
VGE(TH)
Collector Emitter Saturation Voltage VCE(SAT)
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
CIES
COES
CRES
td(on)
tr
td(off)
tf
EON
EOFF
ETS
td(on)
tr
td(off)
tf
EON
EOFF
ETS
Qg
Qge
Qgc
VGE = 0V, IC = 1mA
VCE = 1350V, VGE = 0V
VCE = 0V, VGE = ± 20V
VGE = VCE, IC = 30mA
VGE = 15V, IC = 30A, TC = 25
VGE = 15V, IC = 30A, TC = 125
VCE = 30V,
VGE = 0V
f = 1MHz
VCC = 600V, IC = 30A
RG = 5Ω, VGE = 15V
Inductive Load, TC = 25
VCC = 600V, IC = 30A
RG = 5Ω, VGE = 15V
Inductive Load, TC = 125
VCC = 600V, IC = 30A
VGE = 15V
Notes :
(2) Not subject to production test verified by design/characterization
Min. Typ. Max. Unit
1350
--
-- V
-- -- 1 mA
-- -- ± 250 nA
4.5 6.0 7.5 V
-- 1.9 2.4 V
-- 2.2 -- V
-- 3570 --
-- 85 --
-- 55 --
pF
pF
pF
-- 30 -- ns
-- 35 -- ns
-- 145 -- ns
-- 115 172 ns
-- 4.4 6.6 mJ
-- 1.18 1.77 mJ
-- 5.56 8.37 mJ
-- 30 -- ns
-- 35 -- ns
-- 160 -- ns
-- 230 -- ns
-- 4.48 6.72 mJ
-- 2.3 3.45 mJ
-- 6.78 10.17 mJ
-- 200 300 nC
-- 25 37 nC
-- 95 142 nC
Feb. 2014 : rev 0.0
www.trinnotech.com
2/8


Part Number TGAN30N135FD1
Description Field Stop Trench IGBT
Maker TRinno
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