• Part: TGAN30N60FDR
  • Description: Field Stop Trench IGBT
  • Manufacturer: TRinno
  • Size: 0.97 MB
Download TGAN30N60FDR Datasheet PDF
TRinno
TGAN30N60FDR
Features : - 600V Field Stop Trench Technology - High Speed Switching - Low Conduction Loss - Positive Temperature Coefficient - Easy Parallel Operation - Short Circuit Withstanding Time 5μs - Ro HS pliant - JEDEC Qualification Applications : UPS, Welder, Inverter, Solar Field Stop Trench IGBT E GC Device TGAN30N60FDR Package TO-3PN Marking TGAN30N60FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF TJ TSTG TL Value 600 ±20 60 30 90 30 231 93 -55 ~ 150 -55 ~ 150 Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum...