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TGAN30N60FDR - Field Stop Trench IGBT

Key Features

  • 600V Field Stop Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy Parallel Operation.
  • Short Circuit Withstanding Time 5μs.
  • RoHS Compliant.
  • JEDEC Qualification.

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Datasheet Details

Part number TGAN30N60FDR
Manufacturer TRinno
File Size 0.97 MB
Description Field Stop Trench IGBT
Datasheet download datasheet TGAN30N60FDR Datasheet

Full PDF Text Transcription for TGAN30N60FDR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGAN30N60FDR. For precise diagrams, and layout, please refer to the original PDF.

Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • Short Circuit Wi...

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e Temperature Coefficient • Easy Parallel Operation • Short Circuit Withstanding Time 5μs • RoHS Compliant • JEDEC Qualification Applications : UPS, Welder, Inverter, Solar TGAN30N60FDR Field Stop Trench IGBT E GC Device TGAN30N60FDR Package TO-3PN Marking TGAN30N60FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8”

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