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TRinno

TGAN30N60FDR Datasheet Preview

TGAN30N60FDR Datasheet

Field Stop Trench IGBT

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Features:
600V Field Stop Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy Parallel Operation
Short Circuit Withstanding Time 5μs
RoHS Compliant
JEDEC Qualification
Applications :
UPS, Welder, Inverter, Solar
TGAN30N60FDR
Field Stop Trench IGBT
E
GC
Device
TGAN30N60FDR
Package
TO-3PN
Marking
TGAN30N60FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25
TC = 100
Diode Continuous Forward Current
Power Dissipation
TC = 100
TC = 25
TC = 100
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Value
600
±20
60
30
90
30
231
93
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.54
1.12
40
Nov. 2014. Rev 0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
Unit
/W
/W
/W
1/8




TRinno

TGAN30N60FDR Datasheet Preview

TGAN30N60FDR Datasheet

Field Stop Trench IGBT

No Preview Available !

TGAN30N60FDR
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25, unless otherwise noted
Parameter
Symbol
Test condition
OFF
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
BVCES
ICES
IGES
VGE = 0V, IC = 1mA
VCE = 600V, VGE = 0V
VCE = 0V, VGE = ± 20V
ON
Gate Emitter Threshold Voltage
VGE(TH)
Collector Emitter Saturation Voltage VCE(SAT)
VGE = VCE, IC = 30mA
VGE = 15V, IC = 30A, TC = 25
VGE = 15V, IC = 30A, TC = 150
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (Note 2)
CIES
COES
CRES
VCE = 30V,
VGE = 0V
f = 1MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Short Circuit Withstanding Time
td(on)
tr
td(off)
tf
EON
EOFF
ETS
td(on)
tr
td(off)
tf
EON
EOFF
ETS
Qg
Qge
Qgc
tSC
VCC = 400V, IC = 30A
RG = 10Ω, VGE = 15V
Inductive Load, TC = 25
VCC = 400V, IC = 30A
RG = 10Ω, VGE = 15V
Inductive Load, TC = 150
VCC = 400V, IC = 30A
VGE = 15V
VCC = 300V, VGE = 15V, TC = 125
Notes :
(2) Not subject to production test verified by design/characterization
Min.
600
--
--
4.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
5
Typ. Max. Unit
-- -- V
-- 1 mA
-- ± 250 nA
6 7.5 V
1.5 2.0 V
1.8 -- V
2000
135
80
--
--
--
pF
pF
pF
35 -- ns
50 -- ns
130 -- ns
50 75 ns
0.87 1.30 mJ
0.73 1.10 mJ
1.60 2.40 mJ
35 -- ns
50 -- ns
140 -- ns
160 -- ns
0.93 1.40 mJ
1.17 1.76 mJ
2.10 3.16 mJ
120 180 nC
12 18 nC
70 105 nC
-- -- μs
Nov. 2014. Rev 0.0
www.trinnotech.com
2/8


Part Number TGAN30N60FDR
Description Field Stop Trench IGBT
Maker TRinno
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