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TRinno

TGAN40N60F2DS Datasheet Preview

TGAN40N60F2DS Datasheet

Field Stop Trench IGBT

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Features
600V Fast Field Stop Trench Technology
Low Switching Loss for a Wide Temperature Range
Positive Temperature Coefficient
Easy Parallel Operation
RoHS Compliant
JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN40N60F2DS
Field Stop Trench IGBT
E
GC
Device
TGAN40N60F2DS
Package
TO-3PN
Marking
TGAN40N60F2DS
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25
TC = 100
Diode Continuous Forward Current
Power Dissipation
TC = 100
TC = 25
TC = 100
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Value
600
±20
80
40
120
20
236
94
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.53
1.12
40
December 2015. Rev 0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
Unit
/W
/W
/W
1/8




TRinno

TGAN40N60F2DS Datasheet Preview

TGAN40N60F2DS Datasheet

Field Stop Trench IGBT

No Preview Available !

TGAN40N60F2DS
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25, unless otherwise noted
Parameter
Symbol
Test condition
OFF
Collector Emitter Breakdown Voltage BVCES
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
ICES
IGES
ON
Gate Emitter Threshold Voltage
VGE(TH)
Collector Emitter Saturation Voltage VCE(SAT)
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
CIES
COES
CRES
td(on)
tr
td(off)
tf
EON
EOFF
ETS
td(on)
tr
td(off)
tf
EON
EOFF
ETS
Qg
Qge
Qgc
VGE = 0V, IC = 1mA
VCE = 600V, VGE = 0V
VCE = 0V, VGE = ± 20V
VGE = VCE, IC = 40mA
VGE = 15V, IC = 40A, TC = 25
VGE = 15V, IC = 40A, TC = 150
VCE = 30V,
VGE = 0V
f = 1MHz
VCC = 400V, IC = 40A
RG = 5Ω, VGE = 15V
Inductive Load, TC = 25
VCC = 400V, IC = 40A
RG = 5Ω, VGE = 15V
Inductive Load, TC = 150
VCC = 400V, IC = 40A
VGE = 15V
Notes :
(2) Not subject to production test verified by design/characterization
Min. Typ. Max. Unit
600 --
-- V
-- -- 1 mA
-- -- ± 250 nA
4.5 6.0 7.5 V
-- 2.3 2.9 V
-- 2.4 -- V
-- 2635 --
pF
-- 135 -- pF
-- 75 -- pF
-- 40 -- ns
-- 75 -- ns
-- 85 -- ns
-- 50 75 ns
-- 1.37 2.05 mJ
-- 0.53 0.79 mJ
-- 1.90 2.84 mJ
-- 40 -- ns
-- 75 -- ns
-- 90 -- ns
-- 45 -- ns
-- 1.43 2.14 mJ
-- 0.60 0.90 mJ
-- 2.03 3.04 mJ
-- 115 172 nC
-- 17 25 nC
-- 60 90 nC
December 2015. Rev 0.0
www.trinnotech.com
2/8


Part Number TGAN40N60F2DS
Description Field Stop Trench IGBT
Maker TRinno
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