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TMAN10N80 - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • JEDEC Qualification TMAN10N80 VDSS = 880 V @Tjmax ID = 10A RDS(on) = 1.05 W(max) @ VGS= 10 V D G Device TMAN10N80 Package TO-3P Marking TMAN10N80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Re.

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Datasheet preview – TMAN10N80

Datasheet Details

Part number TMAN10N80
Manufacturer TRinno
File Size 482.97 KB
Description N-channel MOSFET
Datasheet download datasheet TMAN10N80 Datasheet
Additional preview pages of the TMAN10N80 datasheet.

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Full PDF Text Transcription

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TMAN10N80 VDSS = 880 V @Tjmax ID = 10A RDS(on) = 1.
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