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TMAN11N90AZ - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • JEDEC Qualification.
  • Improved ESD performance BVDSS 900V TMAN11N90AZ N-channel MOSFET ID RDS(on) 11A < 0.9W Device TMAN11N90AZ Package TO-3PN Marking TMAN11N90AZ Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetiti.

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Datasheet preview – TMAN11N90AZ

Datasheet Details

Part number TMAN11N90AZ
Manufacturer TRinno
File Size 498.70 KB
Description N-channel MOSFET
Datasheet download datasheet TMAN11N90AZ Datasheet
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Full PDF Text Transcription

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance BVDSS 900V TMAN11N90AZ N-channel MOSFET ID RDS(on) 11A < 0.
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