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TMAN9N90 - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • JEDEC Qualification TO-3PN BVDSS 900V TMAN9N90 N-channel MOSFET ID RDS(on) 9.5A < 1.4W D G Device TMAN9N90 Package TO-3PN Marking TMAN9N90 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Re.

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Datasheet preview – TMAN9N90

Datasheet Details

Part number TMAN9N90
Manufacturer TRinno
File Size 420.66 KB
Description N-channel MOSFET
Datasheet download datasheet TMAN9N90 Datasheet
Additional preview pages of the TMAN9N90 datasheet.

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Full PDF Text Transcription

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TO-3PN BVDSS 900V TMAN9N90 N-channel MOSFET ID RDS(on) 9.5A < 1.
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