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TMD4N65AZ Datasheet Preview

TMD4N65AZ Datasheet

N-channel MOSFET

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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK
TMD4N65AZ(G)/TMU4N65AZ(G)
BVDSS
650V
N-channel MOSFET
ID RDS(on)
4.0A
< 2.4W
I-PAK
Device
TMD4N65AZ / TMU4N65AZ
TMD4N65AZG / TMU4N65AZG
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD4N65AZ / TMU4N65AZ
TMD4N65AZG / TMU4N65AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD4N65AZ(G)/TMU4N65AZ(G)
650
±30
4
2.63
16
206
4
9.84
98.4
0.78
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMD4N65AZ(G)/TMU4N65AZ(G)
1.27
110
September 2012 : Rev0
www.trinnotech.com
Unit
/W
/W
1/6




TRinno

TMD4N65AZ Datasheet Preview

TMD4N65AZ Datasheet

N-channel MOSFET

No Preview Available !

TMD4N65AZ(G)/TMU4N65AZ(G)
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 650 --
--
V
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
--
IDSS
VDS = 520 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
3
--
5
V
RDS(on)
VGS = 10 V, ID = 2.0 A
-- 2.0 2.4 W
gFS
VDS = 30 V, ID = 2.0 A
-- 6.5 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 642 --
-- 67 --
-- 9.6 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
VDD = 325 V, ID = 4.0 A,
--
19
--
ns
tr
RG = 25
-- 22 -- ns
td(off)
-- 50 -- ns
tf -- 18 -- ns
Qg
VDS = 520 V, ID = 4.0 A,
--
15
--
nC
Qgs
VGS = 10 V
-- 3 -- nC
Qgd -- 7 -- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 4.0 A
VGS = 0 V, IS = 4.0 A
dIF / dt = 100 A/µs
-- -- 4 A
-- -- 16 A
-- -- 1.5 V
-- 328 --
ns
-- 1.7 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=23.8mH, I AS = 4.0A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD 4.0A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
September 2012 : Rev0
www.trinnotech.com
2/6


Part Number TMD4N65AZ
Description N-channel MOSFET
Maker TRinno
Total Page 6 Pages
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