Datasheet4U Logo Datasheet4U.com

TMD4N65AZ - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification.
  • Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.4W I-PAK Device TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

📥 Download Datasheet

Datasheet Details

Part number TMD4N65AZ
Manufacturer TRinno
File Size 442.42 KB
Description N-channel MOSFET
Datasheet download datasheet TMD4N65AZ Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TMD4N65L N-Channel Trench MOSFET Unigroup
TMD0507-2 Power GaAs MMIC Toshiba
TMD0507-2A Microwave Power GaAs MMIC Toshiba
TMD0708-2 POWER GAAS MMIC Toshiba Semiconductor
TMD1013-1 MICROWAVE POWER MMIC AMPLIFIER Toshiba Semiconductor

Other Datasheets by TRinno

Part Number Description
TMD4N65AZG N-channel MOSFET
TMD4N65Z N-channel MOSFET
TMD4N65ZG N-channel MOSFET
TMD4N60AZ N-channel MOSFET
TMD4N60AZG N-channel MOSFET

Full PDF Text Transcription

Click to expand full text
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.
Published: |