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TRinno

TMD5N40ZG Datasheet Preview

TMD5N40ZG Datasheet

N-channel MOSFET

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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK
Device
TMD5N40ZG/TMU5N40ZG
Package
D-PAK/I-PAK
TMD5N40ZG/TMU5N40ZG
VDSS = 440 V @Tjmax
ID = 3.4A
RDS(on) = 1.6 W(max) @ VGS= 10 V
I-PAK
D
G
S
Marking
TMD5N40ZG/TMU5N40ZG
Remark
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
August 2011 : Rev0
www.trinnotech.com
TMD5N40ZG/TMU5N40ZG
400
±30
3.4*
2.15*
13.6*
165
3.4
5.0
50
0.4
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
TMD5N40ZG/TMU5N40ZG
2.5
110
Unit
/W
/W
1/6




TRinno

TMD5N40ZG Datasheet Preview

TMD5N40ZG Datasheet

N-channel MOSFET

No Preview Available !

TMD5N40ZG/TMU5N40ZG
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
OFF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Forward Gate-Source Leakage Current
Reverse Gate-Source Leakage Current
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0 V, ID = 250 mA
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 mA
VGS = 10 V, ID = 1.7A
VDS = 30 V, ID = 1.7 A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD = 200 V, ID = 3.4 A,
RG = 25
VDS = 320V, ID = 3.4 A,
VGS = 10 V
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
---
---
VGS = 0 V, IS = 3.4 A
VGS = 0 V, IS = 3.4 A
dIF / dt = 100 A/ms
Min
400
--
--
--
--
2
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ Max Units
-- -- V
-- 1 mA
-- 10 mA
-- 100 µA
--
-100
µA
-- 4
1.2 1.6
7 --
V
W
S
522 --
56 --
4.3 --
pF
pF
pF
12 -- ns
10 -- ns
38 -- ns
9 -- ns
7.1 -- nC
2.2 -- nC
1.7 -- nC
-- 3.4 A
-- 13.6 A
-- 1.5
185 --
0.8 --
V
ns
mC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=25mH, I AS =3.4A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD ≤ 3.4A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
August 2011 : Rev0
www.trinnotech.com
2/6


Part Number TMD5N40ZG
Description N-channel MOSFET
Maker TRinno
Total Page 6 Pages
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