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TMT3N30G - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification D Device TMT3N30G Package SOT223 TMT3N30G VDSS = 330V @Tjmax ID = 3A RDS(on) = 2.15 W(max) @ VGS= 10 V RDS(on) = 1.73 W(typ) @ VGS= 10 V S D G Marking TMT3N30G D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Av.

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Datasheet Details

Part number TMT3N30G
Manufacturer TRinno
File Size 303.14 KB
Description N-channel MOSFET
Datasheet download datasheet TMT3N30G Datasheet
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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D Device TMT3N30G Package SOT223 TMT3N30G VDSS = 330V @Tjmax ID = 3A RDS(on) = 2.15 W(max) @ VGS= 10 V RDS(on) = 1.
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