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TMU3N40ZG - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification.
  • Improved ESD performance D-PAK Device TMD3N40ZG/TMU3N40ZG Package D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TMU3N40ZG S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed.

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Datasheet preview – TMU3N40ZG

Datasheet Details

Part number TMU3N40ZG
Manufacturer TRinno
File Size 528.62 KB
Description N-channel MOSFET
Datasheet download datasheet TMU3N40ZG Datasheet
Additional preview pages of the TMU3N40ZG datasheet.

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Full PDF Text Transcription

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK Device TMD3N40ZG/TMU3N40ZG Package D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.
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