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TMU3N80G - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.2 W(max) @ VGS= 10 V D-PAK I-PAK D Device TMD3N80G/TMU3N80G Package D-PAK/I-PAK G S Marking TMD3N80G/TMU3N80G Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC.

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Datasheet preview – TMU3N80G

Datasheet Details

Part number TMU3N80G
Manufacturer TRinno
File Size 325.49 KB
Description N-channel MOSFET
Datasheet download datasheet TMU3N80G Datasheet
Additional preview pages of the TMU3N80G datasheet.

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Full PDF Text Transcription

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.
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