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TMU6N65G - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N65/TMU6N65 TMD6N65G/TMU6N65G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single.

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Datasheet Details

Part number TMU6N65G
Manufacturer TRinno
File Size 593.27 KB
Description N-channel MOSFET
Datasheet download datasheet TMU6N65G Datasheet
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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.
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