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TMU6N70 - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification TMD6N70(G)/TMU6N70(G) VDSS = 770 V @Tjmax ID = 5A RDS(on) = 1.65 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N70/TMU6N70 TMD6N70G/TMU6N70G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Sin.

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Datasheet preview – TMU6N70

Datasheet Details

Part number TMU6N70
Manufacturer TRinno
File Size 429.46 KB
Description N-channel MOSFET
Datasheet download datasheet TMU6N70 Datasheet
Additional preview pages of the TMU6N70 datasheet.

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Full PDF Text Transcription

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N70(G)/TMU6N70(G) VDSS = 770 V @Tjmax ID = 5A RDS(on) = 1.
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