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FHT8050 Datasheet

Low Frequency Power Amplifier Transistors

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ࢅຫ৖ൈहࡍྯ૵਌
Low Frequency Power Amplifier Transistors
Low Frequency Power Amplifier Transistors ࢅຫ৖ൈहࡍྯ૵਌
FHT8050
DESCRIPTION & FEATURES 概述及特點
Suitable for Driver Stage of Small Motor 小馬達驅動
Complementary to FHT8550 FHT8550 互補
SOT-23
PIN ASSIGNMENT 引腳說明
PIN NAME PIN NUMBER 引腳序號
管腳符號
SOT-23
FUNCTION
功能
B 1 BASE
E 2 EMITTER
C 3 COLLECTOR
MAXIMUM RATINGS(Ta=25) 最大額定值
CHARACTERISTIC 特性參數
Symbol 符號 Rating 額定值
Unit 單位
Collector-Emitter Voltage 集電極-發射極電壓
VCEO
25
Vdc
Collector-Base Voltage 集電極-基極電壓
VCBO
40
Vdc
Emitter-Base Voltage 發射極-基極電壓
VEBO
5.0
Vdc
Collector Current—Continuous 集電極電流-連續
IC
800 mAdc
Base Current 基極電流
IB 160 mAdc
THERMAL CHARACTERISTICS 熱特性
CHARACTERISTIC 特性參數
Symbol 符號 Max 最大值
Unit 單位
Collector Power Dissipation 集電極耗散功率
Junction and Storage Temperature結溫和儲存溫度
DEVICE MARKING 打標
Pc
Tj,
Tstg
300
150
-55 ~150
mW
hFE1FHT8050O=7O(85~200), FHT8050Y=7Y(160~300) ,FHT8050G=7G280~400
ELECTRICAL CHARACTERISTICS 電特性
(TA=25unless otherwise noted 如無特殊說明,溫度為 25)
Characteristic 特性參數
Symbol
符號
Test Condition
測試條件
Min Type Max Unit
最小值 典型值 最大值 單位
Collector Cutoff Current
集電極截止電流
ICBO VCB=30VIE=0 — — 0.1 µA
Emitter Cutoff Current
發射極截止電流
IEBO VEB=5V, IC=0 — — 0.1 µA
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO
IC=10mA
25 — — V
Collector- Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO
IC=100µA
40 — — V
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V(BR)EBO
IE=100µA
5 — —V
DC Current Gain 直流電流增益
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
hFE(1)
hFE(2)
VCEsat
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=500mA,IB=50mA
85
40
400
0.6 V
Base Emitter Voltage
基極發射極電壓
VBE
VCE=1V, IC=10mA
100
0.8
1.2
V
Transition Frequency 特微頻率
fT
VCE=5V,IC=10mA 120 MHZ
Collector Output Capacitance
輸出電容
Vob
VCB=10V,IE=0,
13
30 pF
f=1MHZ
1



Part Number FHT8050
Description Low Frequency Power Amplifier Transistors
Maker TSC
Total Page 1 Pages
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