2N3114CSM - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N3114CSM
Manufacturer	TT Electronics
File Size	144.61 KB
Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet	2N3114CSM Datasheet

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 150mA PD Total Power Dissipation at TA = 25°C 350mW Derate Above 25°C 2mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max.