BDS21 - SILICON EPIBASE PNP DARLINGTON TRANSISTOR

TT Electronics

Datasheet Details

Part number	BDS21
Manufacturer	TT Electronics
File Size	797.58 KB
Description	SILICON EPIBASE PNP DARLINGTON TRANSISTOR
Datasheet	BDS21 Datasheet

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SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -80V VCEO Collector – Emitter Voltage -80V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -5A IB Base Current -0.1A PD Total Power Dissipation at TC = 25°C 35W Derate Above 25°C 0.2W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max.