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HCT70000MTX - N-Channel Enhancement Mode MOS Transistor

Download the HCT70000MTX datasheet PDF. This datasheet also covers the HCT7000M variant, as both devices belong to the same n-channel enhancement mode mos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin  ceramic LCC package.

Electrical characteris cs are similar to those of the JEDEC 2N7000.

Key Features

  •  200 mA ID.
  •  Ultra small surface mount package.
  •  RDS(ON) < 5Ω.
  •  Pin-out compatible with most SOT23.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HCT7000M-TT.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HCT7000 N-Channel Enhancement Mode MOS Transistor ETC
HCT7000M N-Channel Enhancement Mode MOS Transistor OPTEK
HCT7000MTX N-Channel Enhancement Mode MOS Transistor OPTEK
HCT7000MTXV N-Channel Enhancement Mode MOS Transistor OPTEK
HCT700 COMPLEMENTARY SWITCHING TRANSISTORS Seme LAB

Other Datasheets by TT Electronics

Part Number Description
HCT7000M N-Channel Enhancement Mode MOS Transistor
HCT7000MTXV N-Channel Enhancement Mode MOS Transistor
HCT802 Dual Enhancement Mode MOSFET
HCT802TX Dual Enhancement Mode MOSFET
HCT802TXV Dual Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode MOS Transistor HCT7000M, HCT70000MTX, HCT7000MTXV Features:  200 mA ID  Ultra small surface mount package  RDS(ON) < 5Ω  Pin-out compatible with most SOT23 MOSFETS Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin  ceramic LCC package. Electrical characteris cs are similar to those of the JEDEC 2N7000.  The pin‐out and footprint matches  that of most enhancement mode MOS transistors built in SOT23 plas c packages.    TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.  TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C.