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HCT7000M - N-Channel Enhancement Mode MOS Transistor

General Description

The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin  ceramic LCC package.

Electrical characteris cs are similar to those of the JEDEC 2N7000.

Key Features

  •  200 mA ID.
  •  Ultra small surface mount package.
  •  RDS(ON) < 5Ω.
  •  Pin-out compatible with most SOT23.

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Datasheet Details

Part number HCT7000M
Manufacturer TT Electronics
File Size 188.06 KB
Description N-Channel Enhancement Mode MOS Transistor
Datasheet download datasheet HCT7000M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode MOS Transistor HCT7000M, HCT70000MTX, HCT7000MTXV Features:  200 mA ID  Ultra small surface mount package  RDS(ON) < 5Ω  Pin-out compatible with most SOT23 MOSFETS Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin  ceramic LCC package. Electrical characteris cs are similar to those of the JEDEC 2N7000.  The pin‐out and footprint matches  that of most enhancement mode MOS transistors built in SOT23 plas c packages.    TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.  TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C.