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HCT802TXV - Dual Enhancement Mode MOSFET

Download the HCT802TXV datasheet PDF. This datasheet also covers the HCT802 variant, as both devices belong to the same dual enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package.

The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.

Key Features

  •  6 pad surface mount package.
  •  VDS = 90V.
  •  RDS(on) < 5Ω.
  •  ID(on) N-Channel = 1.5A | P-Channel = 1.1A.
  •  Two devices selected for VDS ID(on) and RDS(on) similarity.
  •  Full TX Processing Available.
  •  Gold plated contacts.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HCT802-TT.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features:  6 pad surface mount package  VDS = 90V  RDS(on) < 5Ω  ID(on) N-Channel = 1.5A | P-Channel = 1.1A  Two devices selected for VDS ID(on) and RDS(on) similarity  Full TX Processing Available  Gold plated contacts Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.  These two enhancement mode  MOSFETS are par cularly well matched for VDS, IDS(on), RDS(on) and Gfs.   TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.  TX products receive a VGS HTRB at 24 V for 48 hrs.