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OP265WPS Datasheet Preview

OP265WPS Datasheet

Emitting Diode

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Plastic Infrared Emitting Diode
OP265WPS
Features:
T-1 (3 mm) package style
Broad irradiance pa ern
Point source with at lens
Higher power output than GaAs at equivalent drive currents
850 nm diode
Description:
The OP265WPS point source model is a at-lensed 850 nm diode with a broad radia on pa ern that provides rela vely
even illumina on over a large area. Its stable forward voltage (VF) vs. temperature characteris c makes this device
appropriate for applica ons where voltage is limited (such as ba ery opera on), while the low rise me/fall me (tr/tf)
makes it ideal for high-speed opera on.
OP265 devices conform to the OP505 and OP535 series devices.
Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data.
Applications:
Space-limited applica ons
Applica ons requiring coupling eciency
Precision op cal designs
Ba ery-operated or voltage-limited
applica ons
Part
Number
OP265WPS
Ordering InformaƟon
LED Peak Output Power (mW/cm2) IF (mA) Total Beam Lead
Wavelength
Min / Max
Typ / Max
Angle
Length
850 nm
.055 / .55
20 / 50
120° 0.50"
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
1
RoHS
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
2
Pin #
1
2
LED
Cathode
Anode
CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing structural failure in
OPTEK'S molded plas cs.
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 07/2016 Page 1




TT

OP265WPS Datasheet Preview

OP265WPS Datasheet

Emitting Diode

No Preview Available !

Plastic Infrared Emitting Diode
OP265WPS
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage and Opera ng Temperature Range
Reverse Voltage
Con nuous Forward Current
Peak Forward Current (1 µs pulse width, 300 pps)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipa on
-40o C to +100o C
2.0 V
50 mA
3.0 A
260° C(1)
100 mW(2)
Notes:
1. RMA ux is recommended. Dura on can be extended to 10 second maximum when ow soldering. A maximum of 20 grams force may be
applied to the leads when soldering.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. EE(APT) is a measurement of the average apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and
centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the
measured area.
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP
Input Diode
EE (APT) Apertured Radiant Incidence
2.70 -
VF Forward Voltage
IR Reverse Current
λP Wavelength at Peak Emission
B
Spectral Bandwidth between Half Power
Points
--
--
- 850
--
MAX UNITS
TEST CONDITIONS
- mW/cm2 IF = 20 mA(3)
1.80 V IF = 20 mA
20 µA VR= 2 V
- nm IF = 10 mA
- nm IF = 20 mA
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 07/2016 Page 2


Part Number OP265WPS
Description Emitting Diode
Maker TT
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