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OP265WPS Datasheet

Emitting Diode

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Plastic Infrared Emitting Diode

OP265WPS

Features:

• T-1 (3 mm) package style

• Broad irradiance pa ern

• Point source with ﬂat lens

• Higher power output than GaAs at equivalent drive currents

• 850 nm diode

Description:

The OP265WPS point source model is a ﬂat-lensed 850 nm diode with a broad radia on pa ern that provides rela vely

even illumina on over a large area. Its stable forward voltage (VF) vs. temperature characteris c makes this device

appropriate for applica ons where voltage is limited (such as ba ery opera on), while the low rise me/fall me (tr/tf)

makes it ideal for high-speed opera on.

OP265 devices conform to the OP505 and OP535 series devices.

Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data.

Applications:

• Space-limited applica ons

• Applica ons requiring coupling eﬃciency

• Precision op cal designs

• Ba ery-operated or voltage-limited

applica ons

Part

Number

OP265WPS

Ordering InformaƟon

LED Peak Output Power (mW/cm2) IF (mA) Total Beam Lead

Wavelength

Min / Max

Typ / Max

Angle

Length

850 nm

.055 / .55

20 / 50

120° 0.50"

DIMENSIONS ARE IN:

[MILLIMETERS]

INCHES

RoHS

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Pin #

LED

Cathode

Anode

CONTAINS POLYSULFONE

To avoid stress cracking, we suggest using

ND Industries’ Vibra-Tite for thread-locking.

Vibra-Tite evaporates fast without causing structural failure in

OPTEK'S molded plas cs.

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Issue B 07/2016 Page 1

OP265WPS Datasheet Preview

OP265WPS Datasheet

Emitting Diode

No Preview Available !

Plastic Infrared Emitting Diode

OP265WPS

Electrical Speciﬁcations

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Storage and Opera ng Temperature Range

Reverse Voltage

Con nuous Forward Current

Peak Forward Current (1 µs pulse width, 300 pps)

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]

Power Dissipa on

-40o C to +100o C

2.0 V

50 mA

3.0 A

260° C(1)

100 mW(2)

Notes:

1. RMA ﬂux is recommended. Dura on can be extended to 10 second maximum when ﬂow soldering. A maximum of 20 grams force may be

applied to the leads when soldering.

2. Derate linearly at 1.33 mW/° C above 25° C.

3. EE(APT) is a measurement of the average apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and

centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the

measured area.

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN TYP

Input Diode

EE (APT) Apertured Radiant Incidence

2.70 -

VF Forward Voltage

IR Reverse Current

λP Wavelength at Peak Emission

Spectral Bandwidth between Half Power

Points

- 850

MAX UNITS

TEST CONDITIONS

- mW/cm2 IF = 20 mA(3)

1.80 V IF = 20 mA

20 µA VR= 2 V

- nm IF = 10 mA

- nm IF = 20 mA

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Issue B 07/2016 Page 2

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OP265WPS Datasheet

Emitting Diode

OP265WPS Datasheet

Emitting Diode

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