T-1 (3 mm) package style
Narrow irradiance pattern
Higher power output than GaAs at equivalent drive currents
850 nm diode
Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs) that is
molded in an IR transmissive clear or amber-tinted epoxy package with a dome lens. Devices feature a narrow source
irradiance pattern and a variety of electrical characteristics. The small T-1 package style makes these devices ideal for space
These devices are mechanically and spectrally matched to other OPTEK products as follows:
The OP266AA family conform to the OP506 and OP535 series devices.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications requiring coupling efficiency
Battery-operated or voltage-limited
LED Peak Output Power (mW/cm2) IF (mA) Total Beam Lead
Min / Max
Typ / Max
5.5 / NA
7.5 / 12.5
11.5 / 16.5
15.5 / NA
20 / 50
1. Outside discrete shell is polysulfone CLEAR.
2. This LED is built with a GaAlAs chip.
3. Max allowable epoxy miniscus is 0.030”.
4. For identification purposes, Cathode lead is .065” ± .035” longer
than the anode lead.
5. Dimensions are in inches
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing structural failure in
OPTEK'S molded plastics.
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue D 10/2018 Page 1