OP293C Overview
Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298AA, which has an 875 nm center wavelength. For identification purposes, each LED anode lead is longer than the cathode lead. Package T-1¾ devices...
OP293C Key Features
- Choice of narrow or wide irradiance pattern
- Choice of power ranges
- Choice of T-1¾, TO-18 or TO-46 package
- Higher power output than GaAs at equivalent LEDs
