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NPN Silicon Phototransistor
OP508FA, OP509A, OP509B
Obsolete (OP508FC, OP509C)
Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared
emitting diodes
OP508
OP509
Description: The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point.
Each device in the OP509 series consists of an NPN silicon phototransistor mounted in a lensed, clear plastic “end-looking” package.