OPB816Z
Description
The OPB816Z slotted switch consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes through the slot.
Key Features
- 0.20” (5.1 mm) wide gap, 0.61” (15.5 mm) deep slot
- Wire length 24” (609 mm) minimum, 26 AWG
- Dust protection
- Two mounting tabs
