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OPB817Z Datasheet Preview

OPB817Z Datasheet

Slotted Optical Switch

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Slotted Optical Switch
OPB817Z
Features:
0.20” (5.08 mm) wide gap, 0.86” (21.84 mm) deep slot
24” (609 mm) 26 AWG wires
Dust protection
Two mounting tabs
Description:
The OPB817Z slotted switch consists of an infrared emitting diode and a NPN silicon phototransistor mounted in an opaque
housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes
through the slot.
The OPB817Z has an 0.86” (21.844 mm) deep slot allowing for a longer reach of the optical center line from the mounting
plane. The phototransistor internal apertures are 0.10” x 0.06” (0.25 mm x 1.52 mm) on the sensor side (“S”) and 0.05” x
0.06” (1.27 mm x 1.52 mm) on the emitter side (“E”).
Applications:
Non-contact object sensing
Assembly line automation
Machine automation
Equipment security
Machine safety
Ordering Information
Part Number
Description
OPB817Z
Slotted switch
14
23
Wire Color
Red
Black
White
Green
Description
Anode
Cathode
Collector
Emitter
RoHS
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
[ MILLIMETERS]
DIMENSIONS ARE IN:
INCHES
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | sensors@ttelectronics.com
Issue A 11/2016 Page 1




TT

OPB817Z Datasheet Preview

OPB817Z Datasheet

Slotted Optical Switch

No Preview Available !

Slotted Optical Switch
OPB817Z
Electrical Specifications
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage & Operating Temperature Range
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1)
Input Diode
Forward DC Current
Peak Forward Current (1 µs pulse width, 300 pps)
Reverse DC Voltage
Power Dissipation(2)
Output Phototransistor
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector DC Current
Power Dissipation(2)
-40° C to +85° C
260° C
50 mA
3A
2V
100 mW
30 V
5V
30 mA
100 mW
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (see OP140 for additional information)
VF Forward Voltage
- - 1.8
V IF = 20 mA
IR Reverse Current
- - 100 µA VR = 2 V
Output Phototransistor (see OP552 for additional information)
V(BR)(CEO)
V(BR)(ECO)
ICEO
Coupled
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
30 -
-
V IC = 1 mA, IF = 0, EE = 0
5-
-
V IE = 100 µA, IF = 0, EE = 0
- - 100 nA VCE = 10 V, IF = 0, EE = 0
IC(ON) On-State Collector Current
1.0 - 10.0 mA VCE = 5 V, IF = 20 mA
VCE(SAT) Collector-Emitter
- - 0.4
V IC = 100 µA, IF = 20 mA
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.67 mW/°C above 25° C.
(3) All parameters were tested using pulse techniques.
(4) Lead spacing of 0.220” (5.59 mm) or 0.320” (8.13 mm) is available. Leads are 0.20” square (5.08 mm) and 0.425” long (10.80 mm), which is
the minimum.
(5) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. Spray
and wipe; do not submerge.
(6) Polarity is denoted by color of housing top: LED (gray or clear), sensor (black).
(7) Clear dust protection.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | sensors@ttelectronics.com
Issue A 11/2016 Page 2


Part Number OPB817Z
Description Slotted Optical Switch
Maker TT
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