OPB821S3Z Description
Each OPB820S and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wide aperture located in front of the infrared diode. Phototransistor switching occurs when an opaque object passes through the slot.
OPB821S3Z Key Features
- Non-contact switching
- Four standard aperture sizes for high resolution
- Low profile
- 0.080” (2.03 mm) wide, 0.250” (8.89 mm) deep slot
- Choice of PCBoard or wire mountings