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OPR2800T Datasheet Preview

OPR2800T Datasheet

Infrared Light Emitting Diode

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High-power GaAIAs
Matches PLCC-2 footprint
875 nm wavelength
Wide beam angle
Wide operating temperature range (-40o C to +100o C)
The OPR2800T is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens window
that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC-2 package and mounts in the
same footprint. The device is suitable for use in single device or array applications. The OPR2800T is spectrally matched to
the OPR5500 phototransistor.
See Application Bulletin 237 for handling instructions.
Non-contact position sensing
Datum detection
Machine automation
Optical encoding
Warning: Front Win-
dow is pressure sen-
sitive. Do not apply
pressure or high
vacuum to window.
Ordering Information
Part LED Peak
Total
Number Wavelength Beam Angle
OPR2800T 875 nm
100°
Packaging
Tape & Reel
Anode Indicator
2
1
Pin #
1
2
LED
Anode
Cathode
RoHS




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OPR2800T Datasheet Preview

OPR2800T Datasheet

Infrared Light Emitting Diode

No Preview Available !

Storage Temperature Range
Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(1)
Power Dissipation
-55o C to +125o C
-40o C to +100o C
30 V
50 mA
250° C
130 mW(2)
Ee (APT) Apertured Radiant Incidence
0.2 -
-
mW/
cm2
IF = 20 mA(3)
VF Forward Voltage
- - 1.50 V IF = 50 mA
IR Reverse Current
- - 100 µA VR= 2.0 V
λP Wavelength at Peak Emission
875 -
nm IF = 10 mA
θHP Emission Angle at Half Power Points
- 100 - Degree IF = 20 mA
tr, tf Output Rise Time, Output Fall Time
-
- 500
ns
IF(PK) = 100 mA, PW = 10 µs,
D.C. = 10.0%
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.39 mW/° C above 25° C.
3. Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the
mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the measured area.
OPR2800T
FoFrowrwaarrdd VVooltlatagegevsvFsoFrwoarwrdaCrudrrCenutrvresnt
vsTTeemmpepreatruarteure
1.8
1.7
1.6
1.5
1.4
OpticaOl pPtoiTwceaemrl PvpsoeIwFravestruTvresemIpF evrsature
3.5
Normalized at 50 mA and 20° C
3.0 -60° C
-40° C
-20° C
2.5
0° C
20° C
40° C
60° C
80° C
2.0 100° C
120° C
1.3
1.2
1.1
1.0
0.9
0
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
10 20 30 40 50 60 70 80 90 100
Forward Current (mA)
1.5
1.0
0.5
0.0
0
10 20 30 40 50 60 70 80 90 100
Forward Current IF (mA)


Part Number OPR2800T
Description Infrared Light Emitting Diode
Maker TT
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