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DMP2160UW Datasheet Preview

DMP2160UW Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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Product specification
Features
Low On-Resistance
100m@ VGS = -4.5V
120m@ VGS = -2.5V
160m@ VGS = -1.8V
Very Low Gate Threshold Voltage VGS(th) 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standards for High Reliability
SOT323
DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (approximate)
Drain
D
TOP VIEW
Gate
Source
Internal Schematic
GS
TOP VIEW
Ordering Information (Note 4)
Notes:
Part Number
DMP2160UW-7
Compliance
Standard
Case
SOT323
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
DMF
DMF = Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb Mar
23
2010
X
Apr
4
2011
Y
May Jun
56
2012
Z
2013
A
Jul Aug Sep
78
9
2014
B
2015
C
Oct Nov Dec
OND
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sales@twtysemi.com
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TY Semiconductor

DMP2160UW Datasheet Preview

DMP2160UW Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Characteristic
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Product specification
DMP2160UW
Value
-20
±12
-1.5
-1.2
-10
Units
V
V
A
A
Value
350
360
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
TJ = +25°C
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Min
-20
-0.4
Typ
-0.6
75
90
120
Forward Transconductance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
gFS
VSD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Notes:
3. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t 10 sec.
4. Short duration pulse test used to minimize self-heating effect.
4
627
64
53
Max
-1.0
±100
±800
-0.9
100
120
160
-1.0
Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -20V, VGS = 0V
nA
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -1.5A
mVGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -1A
S VDS = -10V, ID = -1.5A
V VGS = 0V, IS = -1.0A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
http://www.twtysemi.com
sales@twtysemi.com
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Free Datasheet http://www.datasheet4u.com/


Part Number DMP2160UW
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker TY Semiconductor
Total Page 2 Pages
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