FEN16CT
Description
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage FEN16AT 50 35 50 IF(AV) Maximum Average Forward Rectified Current IFM IFSM Peak Repetitive Forward Current Non-Repetitive Peak Forward Surge Current per leg FEN16BT FEN16CT 100 150 70 105 100 150 8.0 16 16 150 FEN16DT 200 140 200 Unit Conditions V V V A TC=125˚C, per leg A TC=125˚C, per total device A Rate VR, Square Wave, 20KHz, TC=125˚C Surge applied at rate load A conditions half wave, single phase, 60Hz TAITRON PONENTS INCORPORATED .taitronponents.
Key Features
- High surge current capability
- Low power loss, high efficiency
- Glass passivated chip junction
- 150˚C operation junction temperature
- Low stored charge majority carrier conduction
- Low forward voltage, high current capability
- High switching speed 35 nanosecond recovery time
