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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

1N5401G-K Datasheet

50V - 1000V Glass Passivated Rectifier

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4 1N5400G-K - 1N5408G-K
Taiwan Semiconductor
3A, 50V - 1000V Glass Passivated Rectifier
FEATURES
Glass passivated chip junction
High current capability, Low VF
High reliability
High surge current capability
Low power loss, high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
High frequency rectification
Freewheeling application
Switching mode converters and inverters in computer and
telecommunication.
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
3
50 - 1000
125
150
DO-201AD
A
V
A
°C
Configuration
Single Die
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94V-0 flammability rating
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Pure tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.2 g (approximately)
DO-201AD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
SYMBOL G-K
G-K
G-K
G-K
G-K
G-K
G-K UNIT
Marking code on the device
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
Maximum DC blocking
voltage
Forward current
Surge peak forward current,
8.3 ms single half sine-wave
superimposed on rated load
per diode
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G
VRRM 50 100 200 400 600 800 1000
VR(RMS)
35
70 140 280 420 560 700
VDC 50 100 200 400 600 800 1000
IF(AV)
3
IFSM 125
V
V
V
A
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
1 Version:B1705


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

1N5401G-K Datasheet

50V - 1000V Glass Passivated Rectifier

No Preview Available !

4 1N5400G-K - 1N5408G-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
RӨJA
RӨJC
LIMIT
45
15
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
1N5400G-K
1N5401G-K
Forward voltage per diode (1)
1N5402G-K
1N5404G-K
1N5406G-K
IF = 3A,TJ = 25°C
VF
1N5407G-K
1N5408G-K
Reverse current @ rated VR per diode (2)
TJ = 25°C
TJ = 125°C
IR
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
1 MHz, VR=4.0V
CJ
TYP
-
-
-
-
25
MAX UNIT
1.1 V
1.0 V
5 µA
100 µA
- pF
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
1N540xG-K
(Note 1, 2)
A0
R0
B0
G
Notes:
1. "x" defines voltage from 50V (1N5400G-K) to 1000V (1N5408G-K)
2. Whole series with green compound (halogen-free)
PACKAGE
PACKING
DO-201AD
DO-201AD
DO-201AD
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
EXAMPLE P/N
EXAMPLE P/N
1N5400G-K A0G
PART NO.
1N5400G-K
PACKING CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2 Version:B1705


Part Number 1N5401G-K
Description 50V - 1000V Glass Passivated Rectifier
Maker Taiwan Semiconductor
Total Page 6 Pages
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