ABS20M-T - 2A 1000V Glass Passivated Bridge Rectifier

Taiwan Semiconductor

ABS20M-T Datasheet Preview — Preview of ABS20M-T PDF

Datasheet Details

Part number	ABS20M-T
Manufacturer	Taiwan Semiconductor ↗
File Size	323.16 KB
Description	2A 1000V Glass Passivated Bridge Rectifier
Datasheet	ABS20M-T-TaiwanSemiconductor.pdf

ABS20M-T Product details

Description

Green compound 2 Version:B1708 AVERAGE FORWARD CURRENT (A) CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 2.5 ABS20M-T Taiwan Semiconductor Fig.2 Typical Junction Capacitance 100 JUNCTION CAPACITANCE (pF) a 2 1.5 10 1 0.5 On Aluminum substrate 0 0 25 50 75 100 125 AMBIENT TEMPERATURE (oC) 150 1 0.1 1 10 REVERSE VOLTAGE (V) 100 Fig.3 Typical Reverse Characteristics 100 Fig.4 Typical Forward Characteristics 10 10 INSTANTANEOUS FORWARD

Features

Glass passivated junction.
Ideal for automated placement.
Reliable low cost construction utilizing molded plastic technique.
High surge current capability.
UL Recognized File # E-326854.
Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21.

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Published: Mar 3, 2020 |