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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

BAT54SD Datasheet

200mW Surface Mount Schottky Barrier Diode

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BAT54T/AD/CD/SD/BR
Taiwan Semiconductor
Small Signal Product
200mW Surface Mount Schottky Barrier Diode
FEATURES
- Fast switching speed
- Low forward voltage drop
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
SOT-363
- Case: SOT-363 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 0.006 gram (approximately)
- Marking Code: KLA, KL6, KL7, KL8, KLB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Forward Surge Current @ t < 1.0 s
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage temperature
VRRM
VRWM
VR
IF
IFRM
IFSM
PD
RθJA
Tj , TSTG
30
200
300
600
200
625
-55 to 125
UNIT
V
mA
mA
mA
mW
°C/W
oC
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
IR=100µA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1.0MHz
IF=IR=10mA, RL=100, IRR=1mA
SYMBOL
V(BR)
VF
IR
CT
trr
MIN
30
--
--
--
--
--
--
--
MAX
--
0.32
0.40
0.50
1.00
2.0
10
5.0
UNIT
V
V
µA
pF
nS
Document Number: DS_S1404008
Version: E14


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

BAT54SD Datasheet

200mW Surface Mount Schottky Barrier Diode

No Preview Available !

Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
1000
Fig. 1 Forward Characteristics
100
10
1
0.1
0.0
TA=125oC
TA= 75oC
TA= 25oC
TA=0oC
TA= -40oC
0.2 0.4 0.6 0.8
VF, Instantaneous Forward Voltage (V)
1.0
Fig. 3 Capacitance BeFtiwg.e3en Terminals Characteristics
100
10
1
0
5 10 15 20 25 30
VR , Reverse Voltage (V)
BAT54T/AD/CD/SD/BR
Taiwan Semiconductor
100
10
1
0.1
0.01
0.001
0
Fig. 2 Typical Reverse Characteristics
125oC
TA=125oC
TA=75oC
TA=25oC
TA=0oC
10 20
VR, Instantaneous Reverse Voltage (V)
30
Fig. 4 Power Derating Curve
200
100
0
0
25 50 75 100 125
TA , Ambient Temperature (°C)
150
Document Number: DS_S1404008
Version: E14


Part Number BAT54SD
Description 200mW Surface Mount Schottky Barrier Diode
Maker Taiwan Semiconductor
Total Page 5 Pages
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