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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

ES1D-T Datasheet

Surface Mount Super Fast Rectifier

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ES1D-T - ES1J-T
Taiwan Semiconductor
1A, 200V - 600V Surface Mount Super Fast Rectifier
FEATURES
Glass passivated junction chip
Ideal for automated placement
Super fast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
1A
200 - 600
V
30 A
150 °C
DO-214AC (SMA)
Configuration
Single Die
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.06 g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
ES1D-T
ES1G-T
Marking code on the device
ES1D
ES1G
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode)
VRRM
VR(RMS)
VDC
IF(AV)
IFSM
200
140
200
400
280
400
1
30
Junction temperature
Storage temperature
TJ
TSTG
- 55 to +150
- 55 to +150
ES1J-T
ES1J
600
420
600
UNIT
V
V
V
A
A
°C
°C
1 Version:C1702


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

ES1D-T Datasheet

Surface Mount Super Fast Rectifier

No Preview Available !

ES1D-T - ES1J-T
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-lead thermal resistance
SYMBOL
RӨJA
RӨJL
LIMIT
85
35
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
Forward voltage per diode (1)
ES1D-T
ES1G-T
ES1J-T
IF =1A, TJ=25°C
VF
Reverse current @ rated VR per diode (2)
TJ = 25°C
TJ =125°C
IR
ES1D-T
Junction capacitance
ES1G-T 1 MHz, VR=4.0V
ES1J-T
CJ
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
IF=0.5A , IR=1.0A
IRR=0.25A
trr
TYP
-
-
-
-
-
16
18
-
MAX
0.95
1.30
1.70
5
100
-
-
35
UNIT
V
V
V
μA
μA
pF
pF
ns
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
ES1x-T
(Note 1, 2)
R3
R2
G
Notes:
1. "x" defines voltage from 200V (ES1D-T) to 600V (ES1J-T)
2. Whole series with green compound (halogen-free)
PACKAGE
SMA
SMA
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
EXAMPLE P/N
EXAMPLE P/N
ES1J-T R3G
PART NO.
ES1J-T
PACKING CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2 Version:C1702


Part Number ES1D-T
Description Surface Mount Super Fast Rectifier
Maker Taiwan Semiconductor
Total Page 6 Pages
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