• Part: ESH3D
  • Description: Surface Mount Ultra Fast Rectifier
  • Manufacturer: Taiwan Semiconductor
  • Size: 438.30 KB
ESH3D Datasheet (PDF) Download
Taiwan Semiconductor
ESH3D

Description

AEC-Q101 qualified Green pound 2 Version:H1903 ESH3B - ESH3D Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current Derating Curve 3.5 3 2.5 2 1.5 1 0.5 RESISTER OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE (°C) CAPACITANCE (pF) Fig.2 Typical Junction Capacitance 100 75 50 25 f=1.0MHz Vsig=50mVp-p 0 0.1 1 10 100 REVERSE VOLTAGE (V) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 1000 TJ=125°C 100 10 TJ=75°C 1 TJ=25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) Fig.4 Typical Forward Characteristics 10 10 UF1DLW 1 0.1 1 TJ=125°C TJ=25°C 0.01 0.001 Pulse width=P3u0ls0eμswidth 1% duty cycle 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.1 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) (A ) 3 Version:H1903 ESH3B - ESH3D Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Maximum Non-repetitive Forward Surge Current 125 8.3ms Single Half Sine Wave 100 PEAK FORWARD SURGE CURRENT (A) 75 50 25 0 1 10 10.

Key Features

  • Glass passivated chip junction
  • Ideal for automated placement
  • Low profile package
  • Ultra fast recovery time for high efficiency
  • pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21